Please use this identifier to cite or link to this item: https://elibrary.tucl.edu.np/handle/123456789/21976
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dc.contributor.authorOli, Dipak-
dc.date.accessioned2024-02-25T07:46:01Z-
dc.date.available2024-02-25T07:46:01Z-
dc.date.issued2024-02-25-
dc.identifier.urihttps://elibrary.tucl.edu.np/handle/123456789/21976-
dc.description.abstractThe adsorption of 𝐻𝐢𝑁 and 𝐻2𝑆 molecules in 3Γ— 3Γ— 1 monolayer and 𝐴𝑙- doped 𝑍𝑛𝑂, replacing one 𝑍𝑛-atom by 𝐴𝑙-atom was studied in spin-polarized DFT by applying the Vienna Abinitio Simulation Package (VASP). Various exchange-correlation functionals like GGA-PBE,metaGGA-SCAN,andDFT+UusingabasissetnamelyPAW(Projected Augmented Wave) pseudopotential were employed in order to determine the structural, electronic, and magnetic properties of the pristine and 𝐴𝑙- doped ZnO before and after the adsorption of 𝐻𝐢𝑁 and 𝐻2𝑆. ZnO monolayer and the ZnO adsorbed with 𝐻𝐢𝑁 and 𝐻2𝑆 were found to be non-magnetic whereas Al-doped ZnO upon the adsorption of 𝐻𝐢𝑁 and 𝐻2𝑆 was found to be magnetic in nature. Similarly, the lattice parameters of ZnO were found to be increasing with the presence of foreign elements. The outcome thus achieved is nearly identical and in good agreement with the earlier theoretical investigations.en_US
dc.language.isoenen_US
dc.publisherAmrit Campusen_US
dc.titleADSORPTIONOFHCNANDH2S OVERZnOANDAl-DOPEDZnO MONOLAYER:FIRSTPRINCIPLES STUDYen_US
dc.typeThesisen_US
local.institute.titleAmrit Campus, Lainchauren_US
local.academic.levelMastersen_US
local.affiliatedinstitute.titleAmrit Campusen_US
Appears in Collections:Physics

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