Please use this identifier to cite or link to this item: https://elibrary.tucl.edu.np/handle/123456789/22165
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dc.contributor.authorKhatri, Kisan-
dc.date.accessioned2024-03-20T11:27:27Z-
dc.date.available2024-03-20T11:27:27Z-
dc.date.issued2021-
dc.identifier.urihttps://elibrary.tucl.edu.np/handle/123456789/22165-
dc.description.abstractThe first-principles calculations based GGA functionals was implemented to study the structural, electronic and magnetic properties of pure and defected hexagonal boron nitride (h-BN) monolayer sheet using Quantum ESPRESSO (QE) package, 6.5 version. The pure h-BN is found to be non-magnetic insulator with band gap of 4.64 eV. The calculated values of formation energy reveals the structural stability of defected system. The formation energies for B and N vacant system are found to be 16.45 eV and 12.84 eV respectively which predicts that N vacant system is more preferable with lower formation energy. The defect on a system abruptly changes the electronic and magnetic properties of h-BN system. The 6.25 % B-vacancy and 6.25 % N-Vacancy defects are found to be half metallic ferromagnet with total magnetization of 2.74 /cell and magnetic semiconductor with total magnetization 1.00 B /cell respectively. Ben_US
dc.language.isoen_USen_US
dc.publisherDepartment of Physicsen_US
dc.subjectMagnetic propertiesen_US
dc.subjectStructural parametersen_US
dc.subjectElectronic propertiesen_US
dc.titleFirst-principles study of structural, electronic and magnetic properties of defected (monovacant) hexagonal boron nitride sheeten_US
dc.typeThesisen_US
local.institute.titleCentral Department of Physicsen_US
local.academic.levelMastersen_US
Appears in Collections:Physics

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